SI1902DL-T1-E3 复合场效应管 20V 660mA/0.66A SOT-363/SC70-6 marking/标记 PAB
| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | 660mA/0.66A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 630mΩ@ VGS =2.5V, ID =400mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6~1.5V |
| 耗散功率PdPower Dissipation | 270mW/0.27W |
| Description & Applications | Dual N-Channel 20-V (D-S) MOSFET FEATURES • Trench FET Power MOSFET |
| 描述与应用 | 双N沟道20-V（D-S）的MOSFET 特点 •沟槽FET功率MOSFET |
| 规格书PDF |
