IRFS1Z3 N沟道MOSFET 2.8A SOT-89 marking/标记 12 低栅极电荷/高速开关/100％雪崩测试
| 最大源漏极电压Vds Drain-Source Voltage | |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 16V |
| 最大漏极电流Id Drain Current | 2.8A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.14Ω/Ohm @2A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.0-2.0V |
| 耗散功率Pd Power Dissipation | 2.1W |
| Description & Applications | Surface Mount Advanced Process Technology Ultra Low On-Resistance ynamic dv/dt Rating Fast Switching Fully Avalanche Rated |
| 描述与应用 | 表面贴装 先进的工艺技术 超低导通电阻 动态dv/ dt额定值 快速切换 |
