IRLML2803TR N沟道MOSFET 1.2A SOT-23/SC-59 marking/标记 1B/B4/BB/BD/B6 低导通电阻
最大源漏极电压Vds Drain-Source Voltage | |
最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
最大漏极电流Id Drain Current | 1.2A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.25Ω/Ohm @910mA,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 1.V |
耗散功率Pd Power Dissipation | 540mW/0.54W |
Description & Applications | Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching |
描述与应用 | 超低导通电阻 N沟道MOSFET SOT-23的脚印 薄型(高度<1.1mm) 可在磁带和卷轴 快速切换 |
规格书PDF |