SI4953DY 复合场效应管 -30V -4.9A SO8 marking/标记 4953
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | -20V |
| 最大漏极电流IdDrain Current | -4.9A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 95mΩ@ VGS = -4.5V, ID = -3.6A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | Dual P-Channel 30-V(D-S) MOSFET FEATURES 100% Rg Tested |
| 描述与应用 | 双P沟道30-V（D-S）的MOSFET 特点 100％的Rg测试 |
| 规格书PDF |
