SI5402BDC 复合场效应管 30V 6.7A 1206-8/vs-8 marking/标记 ADO
| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 6.7A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 35mΩ@ VGS =10V, ID =4.9A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1~3V |
| 耗散功率PdPower Dissipation | 2.5W |
| Description & Applications | N-Channel, 30-V (D-S) MOSFET |
| 描述与应用 | 30-V（D-S）的MOSFET N通道 |
| 规格书PDF |
