| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.042Ω @2A,4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.7-1.4V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | FEATURES Low On-State Resistance : Rds(on) = 0.25Ω@ Vgs = -10V Rds(on) = 0.45Ω@ Vgs = -4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -4.5V P-Channel Power MOSFET DMOS Structure Small Package : SOT-23 |
| 描述与应用 | 低导通电阻：RDS（ON）=0.25Ω@ VGS=-10V 的Rds（on）=0.45Ω@ VGS=-4.5V 超高速开关 内置栅极保护二极管 驱动电压：-4.5V P沟道功率MOSFET DMOS结构式 小封装：SOT-23 |