| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | -2.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.13Ω @1-1.5A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5--1.2V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | Low On-State Resistance : Rds(on) = 0.17Ω@ Vgs = -4.5V Rds(on) = 0.3Ω@ Vgs = -2.5V Ultra High-Speed Switching Dribing Voltage : -2.5V Gate Protect Diode Built-in P-Channel Power MOSFET DMOS Structure Small Package |
| 描述与应用 | 低导通电阻：RDS（ON）=0.17Ω@ VGS=-4.5V RDS（ON）=0.3Ω@ VGS=-2.5V 超高速开关 Dribing电压：-2.5V 内置栅极保护二极管 P沟道功率MOSFET DMOS结构式 小包装 |