| Q1 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| Q1集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| Q1集电极连续输出电流IC Collector Current(IC) |
100MA |
| Q2 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-50V |
| Q2集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-50V |
| Q2集电极连续输出电流IC Collector Current(IC) |
-100MA |
| Q1基极输入电阻R1 Input Resistance(R1) |
47 kΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
47 kΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
4.7kΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
10kΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
0.47 |
| 直流电流增益hFE DC Current Gain(hFE) Q1/Q2 |
80 / 30 |
| 截止频率fT Transtion Frequency(fT) Q1/Q2 |
150MHZ / 80MHZ |
| 耗散功率Pc Power Dissipation |
150MW |
| Description & Applications |
Silicon NPN epitaxial planer transistor (Tr1)
Silicon PNP epitaxial planer transistor (Tr2)
For switching/digital circuits
UN1213+UN111F
|
| 描述与应用 |
硅NPN型外延刨床晶体管(Tr1)
硅PNP型外延刨床晶体管(Tr2)
开关/数字电路
UN1213 + UN111F
|