| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -2.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.11Ω @1.5A,10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--2.5V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | FEATURES Low On-State Resistance : Rds(on) = 0.15Ω@ Vgs = -10V Rds(on) = 0.28Ω@ Vgs = -4.5V Ultra High-Speed Switching Driving Voltage : -4.5V Gate Protect Diode Built-in P-Channel Power MOSFET DMOS Structure Small Package |
| 描述与应用 | 低导通电阻：RDS（ON）=0.15Ω@ VGS=-10V 的Rds（on）=0.28Ω@ VGS=-4.5V 超高速开关 驱动电压：-4.5V 内置栅极保护二极管 P沟道功率MOSFET DMOS结构式 小包装 |