| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.050Ω/Ohm @2A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.2V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | Power MOSFET ■GENERAL DESCRIPTION The XP161A11A1PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. A gate protect diode is built-in to prevent static damage. The small SOT-89 package makes high density mounting possible. FEATURES Low On-State Resistance : Rds(on)=0.065Ω@ Vgs=10V Rds(on)=0.105Ω@ Vgs=4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-89 |
| 描述与应用 | 功率MOSFET ■概述 XP161A11A1PR是一个N沟道功率MOSFET具有低通态电阻和超高速开关特性。 由于高速开关是可能的，该IC可有效地设置从而节省能源。 栅极保护二极管是内置的，以防止静电损坏。 小SOT-89封装，使高密度安装的可能 低导通电阻的R（on）=0.065Ω@ VGS= 10V RDS（ON）=0.105Ω@ VGS= 4.5V 超高速开关 内置栅极保护二极管 驱动电压：4.5V N沟道功率MOSFET DMOS结构式 小封装：SOT-89 |