| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-60V/60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-50V/50V |
| 集电极连续输出电流IC Collector Current(IC) |
-100mA/100mA |
| 截止频率fT Transtion Frequency(fT) |
80MHz/150MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
160~460/160~460 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
-300mA/100mA |
| 耗散功率Pc Power Dissipation |
150mW |
| Description & Applications |
Features • Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) • Two elements incorporated into one package(Emitter-coupled transistors) • Reduction of the mounting area and assembly cost by one half. Applications • For general amplification 2SB709A+2SD601A |
| 描述与应用 |
特点 •硅PNP外延刨床晶体管的（TR1）硅NPN外延刨床晶体管的（TR2） •两个要素纳入一个包（发射极耦合晶体管） •减少安装面积和汇编一半的费用。 应用 •对于一般的放大 2SB709A+2SD601A |