| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.1Ω/Ohm @500mA,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.7-1.4V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | FEATURES Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V Rds(on) = 0.16Ω@ Vgs = 2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 2.5V N-Channel Power MOSFET DMOS Structure Small Package |
| 描述与应用 | FEATURES Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V Rds(on) = 0.16Ω@ Vgs = 2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 2.5V N-Channel Power MOSFET DMOS Structure Small Package |