| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 1A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.1Ω/Ohm @500mA,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1,2V |
| 耗散功率Pd Power Dissipation | 500mW/0.5W |
| Description & Applications | FEATURES Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V Rds(on) = 0.14Ω@ Vgs = 2.5V Rds(on) = 0.25Ω@ Vgs = 1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 |
| 描述与应用 | 低导通电阻的Rds（on）=0.1Ω@ VGS= 4.5V RDS（ON）=0.14Ω@ VGS= 2.5V RDS（ON）=0.25Ω@ VGS= 1.5V 超高速开关 内置栅极保护二极管 驱动电压：1.5V N沟道功率MOSFET DMOS结构式 小封装：SOT-23 |