si1406dh-T1-E3 N沟道MOSFET 20V 3.9A SOT-363/SC70-6/TSSOP6/SC-88 marking/标记 abc 低导通电阻/高速开关
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 3.9A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.065Ω/Ohm @3.9A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.45-1.2V |
| 耗散功率Pd Power Dissipation | 1.56W |
| Description & Applications | N-Channel 25-V (D-S) MOSFET FEATURES TrenchFET Power MOSFETS 1.8-V Rated hermally Enhanced SC-70 Package |
| 描述与应用 | N沟道25-V（D-S）的MOSFET 耐热增强型SC-70封装 |
| 规格书PDF |
