| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 30v |
| 最大漏极电流Id Drain Current | 10mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4--2.2 |
| 耗散功率Pd Power Dissipation | 250mW/0.25W |
| Description & Applications | N-channel silicon junction field-effect transistors N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. Features and benefits Low leakage level (typ. 500 fA) High gain Low cut-off voltage (max. 2.2 V for BF545A). |
| 描述与应用 | 硅N沟道结型场效应晶体管 对称N沟道硅结型场效应晶体管采用SOT23封装 低漏级（典型值500 FA） 高增益 低截止电压（最大2.2 V BF545A） |