| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 30mA |
| 截止频率fTTranstion Frequency(fT) | 250MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 60~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 280mW/0.28W |
| Description & Applications | NPN Silicon RF Transistor For general small-signal RF applications up to 300 MHz in amplifier,mixer and oscillator circuits |
| 描述与应用 | NPN硅RF晶体管 对于一般的小信号射频应用 最多到300 MHz放大器， 混频器和振荡器电路 |