| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流ICCollector Current(IC) | −25mA |
| 截止频率fTTranstion Frequency(fT) | 325MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | |
| 耗散功率PcPoWer Dissipation | 250mW/0.25W |
| Description & Applications | PNP medium frequency transistor FEATURES • Low current (max. 25 mA) • Low voltage (max. 40 V). APPLICATIONS • Medium frequency applications in thick and thin film circuits. |
| 描述与应用 | PNP中频晶体管 特点 •低电流（最大25毫安） •低电压（最大40 V）。 应用 •中频应用中厚膜和薄膜电路 |