RN1971FE 双NPN带阻尼三极管 50V 0.1A R1=10KΩ HEF=120~270 250MHZ SOT563 代码 XXM
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/0.1A |
| Q1基极输入电阻R1 Input Resistance(R1) | 10kΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 0 |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | |
| Q2基极输入电阻R1 Input Resistance(R1) | 10kΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 0 |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | |
| 直流电流增益hFE DC Current Gain(hFE) | 120~700 |
| 截止频率fT Transtion Frequency(fT) | 250MHZ |
| 耗散功率Pc Power Dissipation | 100mW/0.1W |
| Description & Applications | Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications • Two devices are incorporated into an Extreme-Super-Mini (6 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. |
| 描述与应用 | 开关，逆变电路，接口电路和驱动器电路应用 •两个偏置电阻晶体管封装在一个器件里。 •偏置电阻晶体管，减少了部件数量。减少零件数，使制造比以往更紧凑的设备和装配成本。 |
| 规格书PDF |
