RN4989FE 复合带阻尼NPN+PNP三极管 50V 0.1A R1=47KΩ R2=22KΩ 250MHZ SOT563 代码 6J
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V/-50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) | 100mA/-0.1A |
| Q1基极输入电阻R1 Input Resistance(R1) | 47 kΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 22 kΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio | 2.14 |
| Q2基极输入电阻R1 Input Resistance(R1) | 47 kΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 22 kΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio | 2.14 |
| 直流电流增益hFE DC Current Gain(hFE) | 70 |
| 截止频率fT Transtion Frequency(fT) | 250MHZ |
| 耗散功率Pc Power Dissipation | 100mW/0.1W |
| Description & Applications | TOSHIBA Transistor Silicon NPN · PNP Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) . * Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications * Two devices are incorporated into an Extreme-Super-Mini (6-pin) package. * Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. |
| 描述与应用 | 东芝晶体管的硅NPN·PNP外延型的（PCT工艺）（内置偏置电阻晶体管）。 *开关，逆变电路，接口电路，驱动器电路应用 *两个偏置电阻晶体管纳入一个超迷你封装。 *偏置电阻晶体管，减少了部件数量。能制造更加紧凑的设备，并降低装配成本。 |
| 规格书PDF |
