TJ15P04M3 增强型场效电晶体硅p沟道 -40V -15A TO252 代码 TJ15P04M3
| 最大源漏极电压Vds Drain-Source Voltage |
-40V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
±20V
|
| 最大漏极电流Id Drain Current |
-15A |
| 源漏极导通电阻Rds Drain-Source On-State |
RDS(ON) = 28 mΩ (typ.) (VGS = -10 V)
|
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
-0.8~-2.0V |
| 耗散功率Pd Power dissipation |
29W |
| 描述与应用 Description & Applications |
场效电晶体硅p沟道MOS(U-MOS)
直流-直流转换器
台式电脑
(1)低漏源极导通电阻:RDS()= 28 mΩ(typ。)(vgs = -10 V)
(2)低漏电流:ids = -10μA(max)(VDS = -40 V)
(3)增强模式:Vth = -0.8到-2.0 V(VDS = -10 V,ID = -0.1 mA)
|
| 规格书PDF |
