MT4S03BU NPN高频三极管 10V 10GHZ SOT343 代码 MR
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 10V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 5V |
集电极连续输出电流ICCollector Current(IC) | 40mA |
截止频率fTTranstion Frequency(fT) | 12GHZ |
直流电流增益hFEDC Current Gain(hFE) | 80~160 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | |
耗散功率PcPower Dissipation | 175mW/0.175W |
Description & Applications | TOSHIBA Transistor Silicon NPN Epitaxial Planar Type. * VHF~UHF Band Low Noise Amplifier Applications. * Low Noise Figure: NF = 1.6dB (Typ.) (@f = 2GHz) . * High Gain: |S21e|2 = 9dB (Typ.) (@f = 2 GHz). |
描述与应用 | 东芝晶体管NPN硅外延平面型。 * VHF??UHF波段低噪声放大器应用。 *低噪声系数:NF=1.6分贝(典型值)(@ F =2GHz的)。 *高增益:S21E| 2=9分贝(典型值)(@ F =2GHZ)。 |
规格书PDF |