SSM3K116TU N沟道MOSFET 30V 2.2A SOT-323/SC-70/USM marking/标记 KK9
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 2.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.1Ω/Ohm @500mA,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.5-1.1V |
| 耗散功率Pd Power Dissipation | 800mW/0.8W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications High Speed Switching Applications • 2.5V drive • Low on-resistance: Ron = 135mΩ (max) (@VGS = 2.5 V) Ron = 100mΩ (max) (@VGS = 4.5 V) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 高速开关应用 •2.5V驱动 •低导通电阻RON =135mΩ（最大） |
| 规格书PDF |
