LMBT6520LT1G PNP三极管 -350V -500mA/-0.5A 40~200MHz 20~200 -500mV/-0.5V SOT-23/SC-59 marking/标记 2Z 高电压
集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -350V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -350V |
集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
截止频率fTTranstion Frequency(fT) | 40~200MHz |
直流电流增益hFEDC Current Gain(hFE) | 20~200 |
管压降VCE(sat)Collector-Emitter SaturationVoltage | −500mV/-0.5V |
耗散功率PcPoWer Dissipation | 225mW/0.225W |
Description & Applications | PNP epitaxial planar transistor High Voltage Transistor FEATURE We declare that the material of product compliance with RoHS requirements. |
描述与应用 | PNP外延平面晶体管 高电压晶体管 特写 我们声明,产品符合RoHS要求的材料。 |
规格书PDF |