NTR4101PT1 P沟道MOS场效应管 -20V -2.4A 0.07ohm SOT-23 marking/标记 TR4 低导通电阻 1.8V驱动
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -2.4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.07Ω @-1.6A,-4.5V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.40--1.5V |
| 耗散功率PdPower Dissipation | 730mW/0.73W |
| Description & Applications | Features • Leading −20 V Trench for Low RDS(on) • −1.8 V Rated for Low Voltage Gate Drive • SOT−23 Surface Mount for Small Footprint • Pb−Free Package is Available |
| 描述与应用 | •领导-20 V沟道低的RDS（on） •-1.8 V额定低电压栅极驱动 •SOT-23表面贴装小尺寸 •无铅包装是可用 |
| 规格书PDF |
