RSM002P03 P沟道MOS场效应管 -30V -2A 0.9ohm SOT-363 marking/标记 WP 低导通电阻 4V驱动
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.9Ω @-200mA,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--2.5V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | Features Low On-resistance. Small package (EMT3). 4V drive. |
| 描述与应用 | 低导通电阻。 小型封装（EMT3）。 4V驱动器。 |
| 规格书PDF |
