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TPC6109 P沟道MOS场效应管 -30V -5A 59毫欧 SOT-163 marking/标记 S3J 高效率DC/DC转换 低漏电流 低导通电阻

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产品描述
最大源漏极电压VdsDrain-Source Voltage-30V
最大栅源极电压Vgs(±)Gate-Source Voltage20V
最大漏极电流IdDrain Current-5A
源漏极导通电阻RdsDrain-Source On-State Resistance59mΩ@ VGS = -10V, ID = -2.5A
开启电压Vgs(th)Gate-Source Threshold Voltage-0.8~-2.0V
耗散功率PdPower Dissipation2.2W
Description & ApplicationsTOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) High-Efficiency DC/DC Converter Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
描述与应用东芝场效应晶体管硅P沟道MOS型(超高速U-MOSIII) 高效率DC/ DC转换器应用 •由于占地面积小,小而薄的包装 •低漏源导通电阻RDS(ON)= 44mΩ(典型值) •高正向转移导纳:| YFS|= 8.0 S(典型值) •低漏电流:IDSS= -10μA(最大)(VDS=-30 V) •增强模式:Vth= -0.8到-2.0 V(VDS= -10 V,ID=-1毫安),
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