MP6K61FU7 复合场效应管 30V 5A MPT6 marking/标记 MP6K61 4V驱动 内置保护二极管
| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 77mΩ@ VGS =4V, ID =5A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1~2.5V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | 4V Drive Nch+Nch MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. Application Switching |
| 描述与应用 | 4V驱动N沟道+ N沟道MOSFET 特点 1）低导通电阻。 2）内置G-S的保护二极管。 应用 交换 |
| 规格书PDF |
