TPC6102 P沟道MOS场效应管 -30V -4.5A 60毫欧 SOT-163 marking/标记 S3B 便携式设备应用 低漏电流 低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -4.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 60mΩ@ VGS = -10V, ID = -2.2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.8~-2.0V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE(U-MOSII) NOTEBOOK PC PORTABLE EQUIPMENTS APPLICATIONS Low drain-source on resistance High forward transfer admittance Low leakage current Enhancement-model |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS型（U-MOSII） 笔记本电脑 便携式设备应用 低漏源电阻 高正向转移导纳 低漏电流 增强模型 |
| 规格书PDF |
