SI5513DC 复合场效应管 20V/-20V 3.1A/-2.1A 1206-8/vs-8 marking/标记 EB
| 最大源漏极电压VdsDrain-Source Voltage | 20V/-20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V/12V |
| 最大漏极电流IdDrain Current | 3.1A/-2.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 134mΩ@ VGS =2.5V, ID =2.3A/260mΩ@ VGS =-2.5V, ID =-1.7A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6~1.5V/-0.6~-1.5V |
| 耗散功率PdPower Dissipation | 1.1W |
| Description & Applications | Complementary 20-V (D-S) MOSFET |
| 描述与应用 | 互补的 20-V（D-S）的MOSFET |
| 规格书PDF |
