SI3455DV P沟道MOS场效应管 -30V -3.5A 190毫欧 SOT-163 marking/标记 55K
最大源漏极电压VdsDrain-Source Voltage | -30V |
最大栅源极电压Vgs(±)Gate-Source Voltage | -20V |
最大漏极电流IdDrain Current | -3.5A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 190mΩ@ VGS ='-4.5V, ID ='-2.8A |
开启电压Vgs(th)Gate-Source Threshold Voltage | -1~-3V |
耗散功率PdPower Dissipation | 2W |
Description & Applications | N-Channel 30-V (D-S) MOSFET |
描述与应用 | N沟道30-V(D-S)的MOSFET |
规格书PDF |