SI3493DV P沟道MOS场效应管 -20V -5.3A 48毫欧 SOT-163 marking/标记 931AK 功率MOS管 负载开关 PA开关
最大源漏极电压VdsDrain-Source Voltage | -20V |
最大栅源极电压Vgs(±)Gate-Source Voltage | -8V |
最大漏极电流IdDrain Current | -5.3A |
源漏极导通电阻RdsDrain-Source On-State Resistance | 48mΩ@ VGS ='-1.8V, ID ='-3A |
开启电压Vgs(th)Gate-Source Threshold Voltage | -0.4~-1V |
耗散功率PdPower Dissipation | 1.1W |
Description & Applications | P-Channel 20-V (D-S) MOSFET FEATURES • Trench FET Power MOSFET • PWM Optimized APPLICATIONS • Load Switch • PA Switch • Battery Switch |
描述与应用 | P沟道20-V(D-S)的MOSFET 特点 •沟槽FET功率MOSFET •PWM优化 应用 •负荷开关 •PA开关 •电池开关 |
规格书PDF |