P01N02LMB N沟道MOSFET 1.2A SOT-23/SC-59 marking/标记 102B 硅栅高速开关/低驱动
最大源漏极电压Vds Drain-Source Voltage | |
最大栅源极电压Vgs(±) Gate-Source Voltage | 15V |
最大漏极电流Id Drain Current | 1.2A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.22Ω/Ohm @1.2A,10V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.7-2.5V |
耗散功率Pd Power Dissipation | 600mW/0.6W |
Description & Applications | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
描述与应用 | N沟道逻辑电平增强 模式场效应晶体管 |
规格书PDF |