P0903BDG N沟道MOSFET 20V 50A TO-252/D-PAK marking/标记 P0903BDG 硅栅高速开关/低驱动
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 50A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 7.5Ω/Ohm @25A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1-3V |
| 耗散功率Pd Power Dissipation | 50W |
| Description & Applications | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| 描述与应用 | N沟道逻辑电平增强 模式场效应晶体管 |
| 规格书PDF |
