MMBF0202PLT1 P沟道MOS场效应管 20V 300mA/0.3A 0.9ohm SOT-23 marking/标记 P3 低导通电阻 高效率
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -0.3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.9Ω @200mA,10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1.0-2.4V |
| 耗散功率PdPower Dissipation | 225mW/0.225W |
| Description & Applications | •Low RDS(on) Provides Higher Efficiency and Extends Battery Life • Miniature SOT–23 Surface Mount Package Saves Board Space |
| 描述与应用 | •低的RDS（on） 提供更高的效率和延长电池寿命 •微型SOT-23表面贴装封装节省电路板空间 |
| 规格书PDF |
