IRFR210BTF-FP001 N沟道MOSFET 200V 2.7A TO-252/D-PAK marking/标记 FR2108 门源齐纳ESD坚固
| 最大源漏极电压Vds Drain-Source Voltage | 200V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | |
| 最大漏极电流Id Drain Current | 2.7A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 1.5Ω/Ohm @1350mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 2.0-4.0V |
| 耗散功率Pd Power Dissipation | 2.5W |
| Description & Applications | 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. • 2.7A, 200V, RDS(on) = 1.5Ω @VGS = 10 V • Low gate charge ( typical 7.2 nC) • Low Crss ( typical 6.8 pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability |
| 描述与应用 | 200V N沟道MOSFET 概述 这些N沟道增强型功率场效应晶体管都采用飞兆半导体专有的，平面的，DMOS技术。 这种先进的技术，特别是针对已尽量减少对通态电阻，提供出色的开关性能，并承受高能量脉冲在雪崩和减刑模式。 这些器件非常适用于高效率开关DC/ DC转换器，开关电源，DC-AC转换器，不间断电源和电机控制。•2.7A，200V，RDS上） =1.5Ω@ VGS= 10 V •低栅极电荷（典型7.2nC） •低Crss（典型6.8 pF） •快速开关 •100％雪崩测试 •改进的dv / dt能力 |
| 规格书PDF |
