HN7G01FU FET+BJT复合场效应管 20V -15V marking/标记 7B SOT-363 电源管理 驱动、接口电路
最大源漏极电压VdsDrain-Source Voltage | MOSFET N-Channel |
最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
最大漏极电流IdDrain Current | 10V |
源漏极导通电阻RdsDrain-Source On-State Resistance | 50mA |
开启电压Vgs(th)Gate-Source Threshold Voltage | 20Ω@ VGS = 2.5V, ID =10mA |
耗散功率PdPower Dissipation | 20ms@VDS=6V,Id=10mA |
Description & Applications | |
描述与应用 | 0.5V~1.5V |
规格书PDF |