HN7G03FU-B FET+BJT复合场效应管 20V -15V marking/标记 8B SOT-363 电源管理 驱动、接口电路
| 最大源漏极电压VdsDrain-Source Voltage | MOSFET N-Channel |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 10V |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 100mA/0.1A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 4Ω@ VGS = 2.5V, ID =10mA |
| 耗散功率PdPower Dissipation | 50ms@VDS=3V，Id=10mA |
| Description & Applications | |
| 描述与应用 | 0.7V~1.3V |
| 规格书PDF |
