H2N7002XIT1 N沟道MOSFET 60V 200mA/0.2A SOT-23/SC-59 marking/标记 025Y 负荷开关/电源管理/低栅极电荷
最大源漏极电压Vds Drain-Source Voltage | 60V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 2.5v |
最大漏极电流Id Drain Current | 200mA/0.2A |
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.8Ω/Ohm 50mA,5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | 0.375V |
耗散功率Pd Power Dissipation | |
Description & Applications | N-Channel MOSFET (60V, 0.2A) |
描述与应用 |
规格书PDF |