H2N7002XIT1 N沟道MOSFET 60V 200mA/0.2A SOT-23/SC-59 marking/标记 025Y 负荷开关/电源管理/低栅极电荷
| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 2.5v |
| 最大漏极电流Id Drain Current | 200mA/0.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.8Ω/Ohm 50mA,5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.375V |
| 耗散功率Pd Power Dissipation | |
| Description & Applications | N-Channel MOSFET (60V, 0.2A) |
| 描述与应用 |
| 规格书PDF |
