H7P1002DS90TR P沟道MOS场效应管 -100V -1.5A 0.0085ohm SOT-252 marking/标记 7P1002
| 最大源漏极电压VdsDrain-Source Voltage | -100V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 30V |
| 最大漏极电流IdDrain Current | -1.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.0085Ω @-7.5A,-10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1.0--2.5V |
| 耗散功率PdPower Dissipation | 3W |
| Description & Applications | • Low on-resistance RDS(on) = 85 mΩ typ. • Low drive current • 4.5 V gate drive device can driven from 5 V source |
| 描述与应用 | •低导通电阻 RDS（ON）=85MΩ（典型值）。 •低驱动电流 •4.5 V门驱动装置可以从5 V电源驱动 |
| 规格书PDF |
