ECH8301 P沟道MOS场效应管 -20V -8A 37毫欧 Vth:-0.4~-1.3V ECH8 marking/标记 JA 低导通电阻 超高速开关
| 最大源漏极电压VdsDrain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V |
| 最大漏极电流IdDrain Current | -8A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 37mΩ@ VGS = -2.5V, ID = -2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.4~-1.3V |
| 耗散功率PdPower Dissipation | 1.6W |
| Description & Applications | P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • Low ON-resistance. • Ultrahigh-speed switcing. • 2.5V drive. |
| 描述与应用 | P-沟道硅MOSFET 通用开关设备应用 特点 •低导通电阻。 •超高速switcing。 •2.5V驱动。 |
| 规格书PDF |
