2SJ439 P沟道MOS场效应管 -16V -5A 0.14ohm SOT-252 marking/标记 J439 低导通电阻 2.5V驱动
| 最大源漏极电压VdsDrain-Source Voltage | -16V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.14Ω @-2.5A,-4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.5--1.1V |
| 耗散功率PdPower Dissipation | 20W |
| Description & Applications | 2.5 V gate drive Low drain−source ON resistance : RDS (ON) = 0.18 Ω (typ.) High forward transfer admittance : |Yfs| = 6.0 S (typ.) Low leakage current : IDSS = −100 µA (max) (VDS = −16 V) Enhancement−mode : Vth = −0.5~−1.1 V (VDS = −10 V, ID = −1 mA) |
| 描述与应用 | 2.5 V门极驱动器 低漏源导通电阻RDS（ON）= 0.18Ω典型值） 高正向转移导纳：| YFS|= 6.0 S（典型值） 低漏电流：IDSS=-100μA（最大值（VDS=-16 V） 增强模式：VTH =-0.5〜-1.1 V（VDS= -10 V，ID=-1毫安） |
| 规格书PDF |
