2SJ462 P沟道MOS场效应管 -12V 2.5A 0.136ohm Vth:-0.7--1.3V >89 marking/标记 UA3 高速开关 低导通电阻
| 最大源漏极电压VdsDrain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 8V |
| 最大漏极电流IdDrain Current | -2.5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.136Ω @-1A,4V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.7--1.3V |
| 耗散功率PdPower Dissipation | 2W |
| Description & Applications | FEATURES • Can be driven by a 2.5 V power source. • New-type compact package. Has advantages of packages for small signals and for power transistors, and compensates those disadvantages. • Low on-state resistance. RDS(ON) : 0.29 Ω MAX. @VGS = –2.5 V, ID = –0.5 A RDS(ON) : 0.19 Ω MAX. @VGS = –4.0 V, ID = –1.0 A |
| 描述与应用 | •可以由一个2.5 V电源。 •新型的紧凑型封装。 包小信号和电源具有优势 晶体管和补偿这些缺点。 •低通态电阻。 RDS（ON）：0.29Ω最大。 @ VGS= -2.5 V，ID=-0.5 A RDS（ON）：0.19Ω最大。 @ VGS= -4.0 V，ID= -1.0à |
| 规格书PDF |
