2SJ412 P沟道MOS场效应管 -100V -16A 0.15ohm SOT-263 marking/标记 J412 高速高电流开关 斩波稳压 DC/DC转换 电机驱动
| 最大源漏极电压VdsDrain-Source Voltage | -100V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -16A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 0.15Ω @-6A,10V |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.8--2.0V |
| 耗散功率PdPower Dissipation | 60W |
| Description & Applications | TOSHIBA field effect transistor silicon p channel MOS type high speed,high current switching applications chopper regulator,DC-DC converter and motor drive applications 4-V gate drive low drain-source on resistance high forward transfer admittance low leakage current enhancement mode |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS类型 高速，高电流开关应用 削波稳压器，DC-DC转换器和电机驱动应用 4-V栅极驱动器 低漏源电阻 高正向转移导纳 低漏电流 增强模式 |
| 规格书PDF |
