| 最大源漏极电压VdsDrain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 6V |
| 最大漏极电流IdDrain Current | -12A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 12mΩ@ VGS = -4.5V, ID = -4A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.3~-1.0v |
| 耗散功率PdPower Dissipation | 1.25W |
| Description & Applications | MOSFETs Silicon P-Channel MOS (U-MOS VI) 1. Applications • Power Management Switches 2. Features (1) 1.2 V gate drive voltage. (2) Low drain-source on-resistance RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 12 mΩ (max) (@VGS = -4.5 V) |
| 描述与应用 | MOSFET的硅P沟道MOS（U-MOS VI） 1。应用 •电源管理开关 2。特点 （1）1.2 V的栅极驱动电压。 （2）低漏源导通电阻: RDS(ON) = 61 mΩ (max) (@VGS = -1.2 V) RDS(ON) = 30 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 21 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 16 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 12 mΩ (max) (@VGS = -4.5 V) |