| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 0 |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 226mΩ@ VGS = -10V, ID = -1000mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.8~-2.0V |
| 耗散功率PdPower Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • 4.0 V drive • P-ch, 2-in-1 • Low ON-resistance: Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V) |
| 描述与应用 | TOSHIBA Field-Effect Transistor Silicon P Channel MOS Type ○ Power Management Switch Applications ○ High-Speed Switching Applications • 4.0 V drive • P-ch, 2-in-1 • Low ON-resistance: Ron = 403mΩ (max) (@VGS = –4 V) Ron = 226mΩ (max) (@VGS = –10 V) |