| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 100mA/0.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 4Ω@ VGS = 4V, ID = 10mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.8~1.5V |
| 耗散功率PdPower Dissipation | 150mW/0.15W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type •High Speed Switching Applications •Analog Switching Applications • Compact package suitable for high-density mounting • Low ON-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 •高速开关应用 •模拟开关应用 •紧凑型封装，适用于高密度安装 •低导通电阻RDS（ON）= 4.0Ω（最大值）（@ VGS=4 V） RDS（ON）=7.0Ω（最大值）（@ VGS=2.5 V） |