| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 4A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.11Ω/Ohm @2A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.2-2.6V |
| 耗散功率Pd Power Dissipation | 1.5W |
| Description & Applications | N-channel silicon MOSFET UltraHigh-Speed switch ing application Features Silicon N-Channel MOS FET Ultrahigh-speed switching applications Low ON-resistance Ultrahigh-speed switching 4V drive |
| 描述与应用 | N沟道硅MOSFET 超高速开关的应用 特性 硅N沟道MOS FET 超高速开关应用 低导通电阻 超高速开关 4V驱动器 |