| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | −20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −20V |
| 集电极连续输出电流ICCollector Current(IC) | −25mA |
| 截止频率fTTranstion Frequency(fT) | 1.75GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 20~90 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -10V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | Silicon PNP Planar RF Transistor Applications UHF/VHF uncontrolled prestages with low noise and low cross modulation. Features High transition frequency Low distortion |
| 描述与应用 | 硅PNP平面RF晶体管 应用 UHF/ VHF不受控制的前置级低噪声和低交叉调制。 特点 高转换频率 低失真 |