| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 140V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 120V |
| 集电极连续输出电流ICCollector Current(IC) | 3A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 15 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 800mV/0.8V |
| 耗散功率PcPower Dissipation | 3W |
| Description & Applications | NPN Silicon AF Power Transistor For AF driver and output stages High collector current High current gain Low collector-emitter saturation voltage Complementary types: BDP952 ... BDP956 (PNP) |
| 描述与应用 | AF功率晶体管NPN硅 对于AF驱动器和输出级 高集电极电流 高电流增益 低集电极 - 发射极饱和电压 可互补类型：BDP952... BDP956（PNP） |