| 最大源漏极电压Vds Drain-Source Voltage |
8V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
3V |
| 最大漏极电流Id Drain Current |
25mA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
8-12/8-13V |
| 耗散功率Pd Power Dissipation |
200mW/0.2W |
| Description & Applications |
Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1 GHz • Operating voltage 5V • Integrated biasing network |
| 描述与应用 |
硅N沟道MOSFET四极管 •低噪声，高增益控制 高达1 GHz的输入级 •工作电压5V •集成偏置网络 |